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PD - 95854
AUTOMOTIVE MOSFET
Features
l l l l l l
Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
IRL3705Z IRL3705ZS IRL3705ZL
HEXFET(R) Power MOSFET
D
VDSS = 55V RDS(on) = 8.0m
S
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
TO-220AB IRL3705Z
D2Pak IRL3705ZS
TO-262 IRL3705ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Max.
86 61 75 340 130 0.88 16 120 180 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
h
W W/C V mJ A mJ C
g
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
i
300 (1.6mm from case ) 10 lbfyin (1.1Nym)
Typ.
Max.
1.14 --- 62 40
Units
C/W
i
i
--- 0.50 --- ---
Junction-to-Ambient (PCB Mount)
j
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1
3/3/04
IRL3705Z/S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- --- --- 1.0 150 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.055 6.5 --- --- --- --- --- --- --- --- 40 12 21 17 240 26 83 4.5 7.5 2880 420 220 1500 330 510 --- --- 8.0 11 12 3.0 --- 20 250 200 -200 60 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 52A m VGS = 5.0V, ID = 43A VGS = 4.5V, ID = 30A V VDS = VGS, ID = 250A V VDS = 25V, ID = 52A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 16V VGS = -16V ID = 43A nC VDS = 44V VGS = 5.0V VDD = 28V ns ID = 43A RG = 4.3 VGS = 5.0V
e e e
e e
Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V
D
G
S
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 16 7.4 75 A 340 1.3 24 11 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
p-n junction diode. TJ = 25C, IS = 52A, VGS = 0V TJ = 25C, IF = 43A, VDD = 28V di/dt = 100A/s
e
S
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRL3705Z/S/L
1000
TOP VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V
1000
TOP VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
1 2.8V 0.1
10 2.8V
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V)
1 0.1 1
60s PULSE WIDTH
Tj = 175C 10 100 1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ()
T J = 175C 100
100
T J = 25C
80
10
60
T J = 175C
40
1
TJ = 25C VDS = 15V 60s PULSE WIDTH
20 V DS = 8.0V 0 0 20 40 60 80 100 120
0.1 0 2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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3
IRL3705Z/S/L
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = Cds + C gd
6.0 ID= 52A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 44V VDS= 28V VDS= 11V
C, Capacitance(pF)
10000
4.0
Ciss
3.0
1000
Coss Crss
2.0
1.0
100 1 10 100
0.0 0 10 20 30 40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00
100
100sec 10 Tc = 25C Tj = 175C Single Pulse 1 1 10 1msec 10msec 100 1000
10.00
T J = 25C
VGS = 0V 1.00 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRL3705Z/S/L
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
90 80
ID, Drain Current (A)
Limited By Package
ID = 43A VGS = 5.0V
70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J
R1 R1 J 1 2
R2 R2 C
Ri (C/W) 0.5413 0.5985
i (sec) 0.000384 0.002778
1
2
0.01
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL3705Z/S/L
500
EAS , Single Pulse Avalanche Energy (mJ)
15V
VDS
L
DRIVER
400
ID 5.7A 8.5A BOTTOM 52A TOP
RG
20V VGS
D.U.T
IAS tp
+ V - DD
300
A
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
3.0
2.5
Charge
2.0
Fig 13a. Basic Gate Charge Waveform
ID = 250A
1.5
L VCC
0
1.0
DUT
0.5
1K
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
6
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IRL3705Z/S/L
100
Duty Cycle = Single Pulse 0.01
Avalanche Current (A)
10
0.05 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
1
0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
150
EAR , Avalanche Energy (mJ)
125
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 52A
100
75
50
25
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRL3705Z/S/L
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
8
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IRL3705Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
HEXFET GATE 1-
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
14.09 (.555) 13.47 (.530)
2 1- GATE- DRAIN 32- DRAINSOURCE 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A
Note: "P" in assembly line position indicates "Lead-Free"
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
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IRL3705Z/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA Ir)AAQAAvAhriyAyvr vvAvqvphrAAGrhqArrA
10
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
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IRL3705Z/S/L
2- COLLECTOR
S @ 7 H V I A U S 6 Q
IGBT 1- GATE
@ 9 P 8 A @ U 6 9
& ( ( A 2 A & A S 6 @
( A F @ @ X
8 A @ DI G
TO-262 Part Marking Information
G 6 I DP U 6 I S @ U DI
S @ D DA U 8 @ S & ( ( A ( A X X A I P A 9 @ G 7 H @ T T 6 G " " G DS A I 6 A T D A DT C U ) @ G Q H 6 Y @ ( ' & A @ 9 P 8 A U P G
P B P G
G 7 H @ T T 6
@ 9 P 8 A U P G
Dimensions are shown in millimeters (inches)
TO-262 Package Outline
A 8 A A @ DI G A G 7 H @ T T 6 A @ C U A DI
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11
IRL3705Z/S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.09mH This value determined from sample failure population. 100% RG = 25, IAS = 52A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . R is measured at TJ of approximately 90C. Repetitive rating; pulse width limited by
TO-220AB package is not recommended for Surface Mount Application.
Notes:
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/04
12
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